Organic light emitting diode display

ABSTRACT

An organic light emitting diode display includes: a substrate including a display area and a non-display area adjacent to the display area; a pixel thin film transistor positioned in the display area of the substrate; a first data wire positioned on the pixel thin film transistor; a second data wire positioned on the first data wire; an organic light emitting element positioned on the second data wire and electrically connected to the pixel thin film transistor through the first data wire and the second data wire; a circuit unit positioned in the non-display area of the substrate and including a circuit thin film transistor electrically connected to the pixel thin film transistor; and a common power supply line overlapping at least part of the circuit unit, electrically connected to the organic light emitting element, and formed on a same layer as the second data wire.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. Pat. Application No.17/401,094, filed on Aug. 12, 2021, which is a divisional of U.S. Pat.Application No. 16/171,162, filed Oct. 25, 2018, now U.S. Pat. No.11,107,877, which claims priority to and the benefit of Korean PatentApplication No. 10-2017-0161936, filed Nov. 29, 2017, the entirecontents of all of which are incorporated herein by reference.

BACKGROUND 1. Field

Aspects of embodiments of the present disclosure relate to an organiclight emitting diode display.

2. Description of the Related Art

Generally, as examples of display devices, there are an organic lightemitting diode (OLED) display, a liquid crystal display (LCD), and aplasma display panel (PDP).

Among them, the organic light emitting diode display includes a thinfilm transistor and an organic light emitting element positioned at adisplay area of a substrate, and a circuit unit and a common powersupply line positioned at a non-display area of the substrate.

The circuit unit of the non-display area is electrically connected tothe thin film transistor of the display area, and the common powersupply line of the non-display area is electrically connected to theorganic light emitting element of the display area.

The above information disclosed in this Background section is providedfor enhancement of understanding of the background of the invention and,therefore, it may contain information that does not form the prior artthat is already known in this country to a person of ordinary skill inthe art.

SUMMARY

According to an aspect of exemplary embodiments, in an organic lightemitting diode display, a width of a non-display area is minimized orreduced.

According to an aspect of exemplary embodiments, in an organic lightemitting diode display, internal contamination may be suppressed.

According to one or more embodiments, an organic light emitting diodedisplay includes: a substrate including a display area and a non-displayarea adjacent to the display area; a pixel thin film transistorpositioned in the display area of the substrate; a first data wirepositioned on the pixel thin film transistor; a second data wirepositioned on the first data wire; an organic light emitting elementpositioned on the second data wire and electrically connected to thepixel thin film transistor through the first data wire and the seconddata wire; a circuit unit positioned in the non-display area of thesubstrate and including a circuit thin film transistor electricallyconnected to the pixel thin film transistor; and a common power supplyline overlapping at least part of the circuit unit, electricallyconnected to the organic light emitting element, and formed on a samelayer as the second data wire.

The non-display area may include: a circuit area adjacent to the displayarea, and including the circuit unit and the common power supply line;and a sealing area adjacent to the circuit area, and the organic lightemitting diode display may further include a sealing part positioned inthe sealing area.

The organic light emitting diode display may further include a heatreflection part in contact with the sealing part between the sealingpart and the substrate.

The heat reflection part may not be in contact with the common powersupply line or the circuit unit.

The heat reflection part may be positioned on the same layer as thesecond data wire.

The heat reflection part may be formed on a same layer as the first datawire.

The heat reflection part may include a same material as the second datawire.

The heat reflection part may include a same material as the first datawire.

The pixel thin film transistor may include a pixel active layerpositioned on the substrate and a pixel gate electrode positioned on thepixel active layer, and the circuit thin film transistor may include acircuit active layer formed on a same layer as the pixel active layerand a circuit gate electrode formed on a same layer as the pixel gateelectrode.

The organic light emitting diode display may further include a firstinsulating layer positioned between the pixel thin film transistor andthe first data wire.

The organic light emitting diode display may further include a secondinsulating layer positioned between the first data wire and the seconddata wire.

The common power supply line may be positioned on the second insulatinglayer, and the circuit unit may be covered by the second insulatinglayer.

The organic light emitting element may include: a first electrodepositioned on the second insulating layer; an organic emission layerpositioned on the first electrode; and a second electrode positioned onthe organic emission layer.

The common power supply line may include a first sub-common power supplyline formed on the same layer as the second data wire, and a secondsub-common power supply line in contact with the first sub-common powersupply line and formed on a same layer as the first electrode.

The common power supply line may be in direct contact with the secondelectrode.

The first electrode and the second data wire may be in contact with thesecond insulating layer.

The organic light emitting diode display may further include a thirdinsulating layer positioned between the second data wire and the firstelectrode.

The common power supply line may include a same material as the seconddata wire.

The common power supply line is formed by a same process as the seconddata wire.

According to an aspect of exemplary embodiments, an organic lightemitting diode display with a minimized or reduced width of anon-display area is provided.

According to another aspect of exemplary embodiments, an organic lightemitting diode display with suppressed internal contamination isprovided.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a top plan view showing an organic light emitting diodedisplay according to an exemplary embodiment.

FIG. 2 is a circuit diagram showing a pixel shown in FIG. 1 .

FIG. 3 is a cross-sectional view taken along the line III-III of FIG. 1.

FIG. 4 is a cross-sectional view of an organic light emitting diodedisplay according to another exemplary embodiment, taken along a linecorresponding to the line III-III of FIG. 1 .

FIG. 5 is a cross-sectional view of an organic light emitting diodedisplay according to another exemplary embodiment, taken along a linecorresponding to the line III-III of FIG. 1 .

DESCRIPTION OF SYMBOLS

PTFT1: first pixel thin film transistor DW1: first data wire DW2: seconddata wire OLED: organic light emitting element CTFT1: first circuit thinfilm transistor CP: circuit unit CVL: common power supply line

DETAILED DESCRIPTION

The present invention will be described more fully hereinafter withreference to the accompanying drawings, in which some exemplaryembodiments of the invention are shown. As those skilled in the artwould realize, the described embodiments may be modified in variousdifferent ways, all without departing from the spirit or scope of thepresent invention.

In order to more clearly explain the present invention, portions thatare not directly related to the present invention may be omitted, andthe same reference numerals are used in connection with the same orsimilar constituent elements throughout the specification.

In addition, the size and thickness of each configuration shown in thedrawings may be arbitrarily shown for better understanding and ease ofdescription, but the present invention is not limited thereto. In thedrawings, the thicknesses of layers, films, panels, regions, etc., maybe exaggerated for clarity. In the drawings, for better understandingand ease of description, the thicknesses of some layers and areas may beexaggerated.

It is to be understood that when an element such as a layer, film,region, or substrate is referred to as being “on” another element, itmay be directly on the other element or one or more intervening elementsmay also be present. In contrast, when an element is referred to asbeing “directly on” another element, there are no intervening elementspresent. Further, in the specification, the words “on” or “above” meanpositioned on or below the object portion, and do not necessarily meanpositioned on the upper side of the object portion based on agravitational direction.

In addition, unless explicitly described to the contrary, the word“comprise” and variations such as “comprises” or “comprising” will beunderstood to imply the inclusion of stated elements, but not theexclusion of any other elements.

Next, an organic light emitting diode display according to an exemplaryembodiment will be described with reference to FIG. 1 to FIG. 3 .

FIG. 1 is a top plan view showing an organic light emitting diodedisplay according to an exemplary embodiment.

Referring to FIG. 1 , an organic light emitting diode display 1000according to an exemplary embodiment includes a first substrate SUB1, asecond substrate SUB2, a pixel Px, a circuit unit CP, a common powersupply line CVL, a sealing part SP, and a driving unit DD.

In an embodiment, the first substrate SUB1 and the second substrate SUB2include at least one among glass, quartz, ceramic, sapphire, plastic,etc. The first substrate SUB1 and the second substrate SUB2 may berigid, flexible, stretchable, rollable, or foldable.

The first substrate SUB1 includes a display area DA for displaying animage and a non-display area NDA neighboring the display area DA. In anembodiment, the non-display area NDA encloses the display area DA;however, the present invention is not limited thereto.

The non-display area NDA includes a circuit area CA to which the displayarea DA is adjacent and in which the circuit unit CP and the commonpower supply line CVL are positioned, and a sealing area SA in which thesealing part SP is positioned is adjacent to the circuit area CA. Thecircuit area CA is positioned between the display area DA and thesealing area SA.

The pixel Px is positioned in the display area DA of the first substrateSUB1. The pixel Px may be a minimum unit displaying an image. The pixelPx is electrically connected to the circuit unit CP, the driving unitDD, and the common power supply line CVL. The pixel Px may display theimage by receiving a scan signal from the circuit unit CP, a data signalfrom the driving unit DD, and a common power supply from the commonpower supply line CVL.

In an embodiment, the pixel Px is electrically connected to a drivingpower supply line ELVDDL, thereby further receiving a driving powersupply from the driving power supply line ELVDDL. For example, thedriving power supply line ELVDDL may be positioned in at least one ofthe display area DA and the non-display area NDA of the first substrateSUB1.

FIG. 2 is a circuit diagram showing a pixel of FIG. 1 .

Referring to FIG. 2 , the pixel Px includes a plurality of pixel thinfilm transistors T1, T2, T3, T4, T5, T6, and T7, a plurality of wiresSn, S(n-1), S(n-2), EM, Vin, DAT, and ELVDDL that are selectivelyelectrically connected to the plurality of pixel thin film transistorsT1, T2, T3, T4, T5, T6, and T7, as well as a pixel capacitor Cst and anorganic light emitting element OLED.

The plurality of pixel thin film transistors T1, T2, T3, T4, T5, T6, andT7 includes a first thin film transistor T1, a second thin filmtransistor T2, a third thin film transistor T3, a fourth thin filmtransistor T4, a fifth thin film transistor T5, a sixth thin filmtransistor T6, and a seventh thin film transistor T7.

A first gate electrode G1 of the first thin film transistor T1 isrespectively electrically connected to a third drain electrode D3 of thethird thin film transistor T3 and a fourth drain electrode D4 of thefourth thin film transistor T4, a first source electrode S1 thereof isrespectively electrically connected to a second drain electrode D2 ofthe second thin film transistor T2 and a fifth drain electrode D5 of thefifth thin film transistor T5, and a first drain electrode D1 thereof isrespectively electrically connected to a third source electrode S3 ofthe third thin film transistor T3 and a sixth source electrode S6 of thesixth thin film transistor T6.

A second gate electrode G2 of the second thin film transistor T2 iselectrically connected to a first scan line Sn, a second sourceelectrode S2 thereof is electrically connected to a data line DAT, and asecond drain electrode D2 thereof is electrically connected to the firstsource electrode S1 of the first thin film transistor T1.

A third gate electrode G3 of the third thin film transistor T3 iselectrically connected to the first scan line Sn, a third sourceelectrode S3 thereof is electrically connected to the first drainelectrode D1 of the first thin film transistor T1, and a third drainelectrode D3 thereof is electrically connected to the first gateelectrode G1 of the first thin film transistor T1.

A fourth gate electrode G4 of the fourth thin film transistor T4 iselectrically connected to a second scan line S(n-1), a fourth sourceelectrode S4 thereof is electrically connected to an initializationpower supply line Vin, and a fourth drain electrode D4 thereof iselectrically connected to the first gate electrode G1 of the first thinfilm transistor T1.

A fifth gate electrode G5 of the fifth thin film transistor T5 iselectrically connected to a emission control line EM, a fifth sourceelectrode S5 thereof is electrically connected to the driving powersupply line ELVDDL, and a fifth drain electrode D5 thereof iselectrically connected to the first source electrode S1 of the firstthin film transistor T1.

A sixth gate electrode G6 of the sixth thin film transistor T6 iselectrically connected to the emission control line EM, a sixth sourceelectrode S6 thereof is electrically connected to the first drainelectrode D1 of the first thin film transistor T1, and a first drainelectrode D6 thereof is electrically connected to a seventh sourceelectrode S7 of the seventh thin film transistor T7.

A seventh gate electrode G7 of the seventh thin film transistor T7 iselectrically connected to a third scan line S(n-2), the seventh sourceelectrode S7 thereof is electrically connected to the organic lightemitting element OLED, and a seventh drain electrode D7 thereof iselectrically connected to the fourth source electrode S4 of the fourththin film transistor T4.

The plurality of wires includes the first scan line Sn transmitting afirst scan signal to each of the second gate electrode G2 of the secondthin film transistor T2 and the third gate electrode G3 of the thirdthin film transistor T3, the second scan line S(n-1) transmitting asecond scan signal to the fourth gate electrode G4 of the fourth thinfilm transistor T4, the third scan line S(n-2) transmitting a third scansignal to the seventh gate electrode G7 of the seventh thin filmtransistor T7, the emission control line EM transmitting an emissioncontrol signal to each of the fifth gate electrode G5 of the fifth thinfilm transistor T5 and the sixth gate electrode G6 of the sixth thinfilm transistor T6, the data line DAT transmitting a data signal to thesecond source electrode S2 of the second thin film transistor T2, thedriving power supply line ELVDDL supplying the driving power supply toeach of one electrode of the pixel capacitor Cst and the fifth sourceelectrode S5 of the fifth thin film transistor T5, and theinitialization power supply line Vin supplying an initialization signalto the fourth source electrode S4 of the fourth thin film transistor T4.

The pixel capacitor Cst includes one electrode electrically connected tothe driving power supply line ELVDDL and the other electrode that iselectrically connected to each of the first gate electrode G1 of thefirst thin film transistor T1 and the third drain electrode D3 of thethird thin film transistor T3.

The organic light emitting element OLED includes a first electrode, asecond electrode positioned on the first electrode, and an organicemission layer positioned between the first electrode and the secondelectrode. The first electrode of the organic light emitting elementOLED is respectively electrically connected to each of the seventhsource electrode S7 of the seventh thin film transistor T7 and the sixthdrain electrode D6 of the sixth thin film transistor T6, and the secondelectrode is electrically connected to the common power supply line CVLto which the common power supply is supplied.

The first scan line Sn, the second scan line S(n-1), the third scan lineS(n-2), the emission control line EM, and the initialization powersupply line Vin may be electrically connected to the circuit unit CPshown in FIG. 1 . The data line DAT may be electrically connected to thedriving unit DD shown in FIG. 1 . The driving power supply line ELVDDLand the common power supply line CVL may be electrically connected to aterminal that is electrically connected to an external printed circuitboard (PCB).

The pixel Px of the organic light emitting diode display 1000 accordingto an exemplary embodiment is configured of the plurality of pixel thinfilm transistors including the first thin film transistor T1 to theseventh thin film transistor T7, the pixel capacitor Cst, the first scanline Sn to the third scan line S(n-2), the data line DAT, the drivingpower supply line ELVDDL, and the initialization power supply line Vin;however, the present invention is not limited thereto, and the pixel ofthe organic light emitting diode display according to another exemplaryembodiment may be configured of at least two pixel thin filmtransistors, at least one pixel capacitor, and wires including at leastone scan line and at least one driving power supply line.

Referring to FIG. 1 , the circuit unit CP is positioned in the circuitarea CA of the non-display area NDA of the first substrate SUB1. In anembodiment, the circuit unit CP includes two circuit units CP separatedfrom each other by the display area DA of the first substrate SUB1;however, the present invention is not limited thereto, and one circuitunit CP or at least three circuit units CP may be included.

The circuit unit CP includes at least one circuit thin film transistorand at least one circuit capacitor. The circuit unit CP is electricallyconnected to the pixel Px. The circuit unit CP may be electricallyconnected to the first scan line Sn, the second scan line S(n-1), thethird scan line S(n-2), the emission control line EM, and theinitialization power supply line Vin of the pixel Px shown in FIG. 2 .

The common power supply line CVL is positioned on the circuit area CA ofthe non-display area NDA of the first substrate SUB1. The common powersupply line CVL overlaps the circuit unit CP. The common power supplyline CVL is positioned on the circuit unit CP. The common power supplyline CVL is electrically connected to the second electrode of theorganic light emitting element of the pixel Px.

The sealing part SP is positioned in the sealing area SA of thenon-display area NDA of the first substrate SUB1. The sealing part SPencloses the display area DA of the first substrate SUB1. The sealingpart SP is positioned between the first substrate SUB1 and the secondsubstrate SUB2 and adheres the first substrate SUB1 and the secondsubstrate SUB2. In an embodiment, the sealing part SP includes a frit;however, the present invention is not limited thereto, and variousorganic materials or inorganic materials capable of adhering the firstsubstrate SUB1 and the second substrate SUB2 may be included.

The driving unit DD is positioned in the non-display area NDA of thefirst substrate SUB1. In an embodiment, the driving unit DD may be anintegrated circuit chip (IC chip) connected to the first substrate SUB1;however, the present invention is not limited thereto. The driving unitDD may be electrically connected to the data line DAT of the pixel Pxshown in FIG. 2 .

Next, a stacking order of the organic light emitting diode display 1000according to an exemplary embodiment will be described with reference toFIG. 3 .

FIG. 3 is a cross-sectional view taken along the line III-III of FIG. 1.

Referring to FIG. 3 , the organic light emitting diode display 1000according to an exemplary embodiment includes the first substrate SUB1,the second substrate SUB2, the pixel Px, a first insulating layer IL1, asecond insulating layer IL2, a pixel definition layer PDL, the circuitunit CP, the common power supply line CVL, the sealing part SP, and aheat reflection part HR.

The first substrate SUB1 includes the display area DA, and thenon-display area NDA including the circuit area CA and the sealing areaSA. The pixel Px, the circuit unit CP, the common power supply line CVL,the sealing part SP, and the heat reflection part HR are positionedbetween the first substrate SUB1 and the second substrate SUB2.

The pixel Px is positioned in the display area DA of the first substrateSUB1, and includes a first pixel thin film transistor PTFT1, a secondpixel thin film transistor PTFT2, a first data wire DW1, a second datawire DW2, and the organic light emitting element OLED.

The first pixel thin film transistor PTFT1 is positioned in the displayarea DA of the first substrate SUB1. The first pixel thin filmtransistor PTFT1 includes a first pixel active layer PAL1 positioned ona first substrate SUB1 and a first pixel gate electrode PGE1 positionedon the first pixel active layer PAL1. The first pixel active layer PAL1includes a channel region overlapping with the first pixel gateelectrode PGE1, and a source electrode and a drain electrode that do notoverlap with the first pixel gate electrode PGE1.

The second pixel thin film transistor PTFT2 is positioned in the displayarea DA of the first substrate SUB1. The second pixel thin filmtransistor PTFT2 includes a second pixel active layer PAL2 positioned onthe first substrate SUB1 and a second pixel gate electrode PGE2positioned on the second pixel active layer PAL2. The second pixelactive layer PAL2 includes a channel region overlapping with the secondpixel gate electrode PGE2, and a source electrode and a drain electrodethat do not overlap with the second pixel gate electrode PGE2.

Each of the first pixel thin film transistor PTFT1 and the second pixelthin film transistor PTFT2 may be one among the first thin filmtransistor T1 to the seventh thin film transistor T7 of the pixel Pxshown in FIG. 2 .

The first data wire DW1 is positioned on the first pixel thin filmtransistor PTFT1 and the second pixel thin film transistor PTFT2. Thefirst insulating layer IL1 is positioned between the first data wire DW1and the first pixel thin film transistor PTFT1 and between the firstdata wire DW1 and the second pixel thin film transistor PTFT2.

The first data wire DW1 may include at least one line among the firstscan line Sn of the pixel Px shown in FIG. 2 , the second scan lineS(n-1), the third scan line S(n-2), the emission control line EM, theinitialization power supply line Vin, the data line DAT, and the drivingpower supply line ELVDDL.

The second data wire DW2 is positioned on the first data wire DW1. Thesecond insulating layer IL2 is positioned between the second data wireDW2 and the first data wire DW1.

The second data wire DW2 is in contact with the first data wire DW1through a contact hole formed in the second insulating layer IL2. In anembodiment, the second data wire DW2 may include a different materialfrom the first data wire DW1; however, the present invention is notlimited thereto, and the same material as the first data wire DW1 may beincluded.

The second data wire DW2 may include at least one line among the firstscan line Sn of the pixel Px shown in FIG. 2 , the second scan lineS(n-1), the third scan line S(n-2), the emission control line EM, theinitialization power supply line Vin, the data line DAT, and the drivingpower supply line ELVDDL.

The organic light emitting element OLED is positioned on the second datawire DW2 and is electrically connected to the second pixel thin filmtransistor PTFT2 through the first data wire DW1 and the second datawire DW2.

The organic light emitting element OLED includes a first electrode E1positioned on the second insulating layer IL2, an organic emission layerOL positioned on the first electrode E1, and a second electrode E2positioned on the organic emission layer OL.

At least one electrode of the first electrode E1 and the secondelectrode E2 may be one among a light transmitting electrode, a lightreflective electrode, and a light translucent electrode. The lightemitted from the organic emission layer OL may be emitted in at leastone electrode direction of the first electrode E1 and the secondelectrode E2.

The first electrode E1 is electrically connected to the second pixelthin film transistor PTFT2 through the second data wire DW2 and thefirst data wire DW1.

The first electrode E1 and the second data wire DW2 are in contact withthe second insulating layer IL2.

The first electrode E1 is partially exposed by the pixel definitionlayer PDL. An opening of the pixel definition layer PDL overlaps atleast part of the first electrode E1.

The second electrode E2 extends from the display area DA to thenon-display area NDA of the first substrate SUB1. The second electrodeE2 is in direct contact with the common power supply line CVL in thenon-display area NDA.

In an embodiment, a capping layer covering the organic light emittingelement OLED may be positioned on the organic light emitting elementOLED, and the second substrate SUB2 is positioned on the organic lightemitting element OLED via the capping layer. In an embodiment, a thinfilm encapsulation layer may be positioned on the organic light emittingelement OLED.

The first insulating layer IL1 is positioned between the first pixelgate electrode PGE1 and the first data wire DW1 of the first pixel thinfilm transistor PTFT1.

The second insulating layer IL2 is positioned between the first datawire DW1 and the second data wire DW2.

In an embodiment, the first insulating layer IL1 and the secondinsulating layer IL2 may include an inorganic insulating layer includingat least one of a silicon nitride and a silicon oxide, or an organicinsulating layer. The first insulating layer IL1 and the secondinsulating layer IL2 may be formed of a single layer or of multiplelayers.

The pixel definition layer PDL may include the opening exposing at leastpart of the first electrode E1 of the organic light emitting elementOLED, and may enclose the edge of the first electrode E1.

The circuit unit CP is positioned in the circuit area CA of thenon-display area NDA of the first substrate SUB1, and includes a firstcircuit thin film transistor CTFT1, a second circuit thin filmtransistor CTFT2, and a first data wire DW1.

The first circuit thin film transistor CTFT1 is positioned in thecircuit area CA of the first substrate SUB1. The first circuit thin filmtransistor CTFT1 includes a first circuit active layer CAL1 positionedon the first substrate SUB1 and a first circuit gate electrode CGE1positioned on the first circuit active layer CAL1. The first circuitactive layer CAL1 includes a channel region overlapping with the firstcircuit gate electrode CGE1, and a source electrode and a drainelectrode that do not overlap with the first circuit gate electrodeCGE1.

The second circuit thin film transistor CTFT2 is positioned in thecircuit area CA of the first substrate SUB1. The second circuit thinfilm transistor CTFT2 includes a second circuit active layer CAL2positioned on the first substrate SUB1 and a second circuit gateelectrode CGE2 positioned on the second circuit active layer CAL2. Thesecond circuit active layer CAL2 includes a channel region overlappingwith the second circuit gate electrode CGE2, and a source electrode anda drain electrode that do not overlap with the second circuit gateelectrode CGE2.

In an embodiment, the first circuit active layer CAL1 and the secondcircuit active layer CAL2 are formed on a same layer as the first pixelactive layer PAL1 and the second pixel active layer PAL2. In anembodiment, the first circuit gate electrode CGE1 and the second circuitgate electrode CGE2 are formed on a same layer as the first pixel gateelectrode PGE1 and the second pixel gate electrode PGE2.

The first circuit thin film transistor CTFT1 and the second circuit thinfilm transistor CTFT2 may be a part among the plurality of circuit thinfilm transistors included in the circuit unit CP. The first circuit thinfilm transistor CTFT1 and the second circuit thin film transistor CTFT2are electrically connected to the first pixel thin film transistor PTFT1and the second pixel thin film transistor PTFT2, which are positioned inthe display area DA.

The first data wire DW1 is positioned on the first circuit thin filmtransistor CTFT1 and the second circuit thin film transistor CTFT2. Thefirst insulating layer IL1 is positioned between the first data wire DW1and the first circuit thin film transistor CTFT1 and between the firstdata wire DW1 and the second circuit thin film transistor CTFT2.

The plurality of circuit thin film transistors included in the circuitunit CP and the first data wire DW1 may have any of various disclosedcircuit structures.

The common power supply line CVL is positioned on the circuit unit CP inthe circuit area CA. The common power supply line CVL overlaps thecircuit unit CP. The common power supply line CVL is electricallyconnected to the organic light emitting element OLED, and is in directcontact with the second electrode E2 of the organic light emittingelement OLED.

In an embodiment, the common power supply line CVL is formed on a samelayer as the second data wire DW2 positioned in the display area DA. Inan embodiment, the common power supply line CVL includes a same materialas the second data wire DW2. In an embodiment, the common power supplyline CVL may be concurrently (e.g., simultaneously) formed with thesecond data wire DW2 by a process forming the second data wire DW2.

The second insulating layer IL2 is positioned between the common powersupply line CVL and the first data wire DW1 of the circuit unit CP. Thecommon power supply line CVL is positioned on the second insulatinglayer IL2, and the circuit unit CP is covered by the second insulatinglayer IL2.

In an embodiment, the common power supply line CVL includes a firstsub-common power supply line SCVL1 and a second sub-common power supplyline SCVL2.

In an embodiment, the first sub-common power supply line SCVL1 is formedon a same layer as the second data wire DW2 and includes a same materialas the second data wire DW2.

The second sub-common power supply line SCVL2 is positioned on the firstsub-common power supply line SCVL1 and is in direct contact with thefirst sub-common power supply line SCVL1. The second sub-common powersupply line SCVL2 is positioned between the first sub-common powersupply line SCVL1 and the second electrode E2 of the organic lightemitting element OLED, and is in direct contact with the firstsub-common power supply line SCVL1 and the second electrode E2. In anembodiment, the second sub-common power supply line SCVL2 may be formedon a same layer as the first electrode E1 of the organic light emittingelement OLED, and may include a same material as the first electrode E1.

The sealing part SP is positioned in the sealing area SA of thenon-display area NDA of the first substrate SUB1. The sealing part SPadheres the first substrate SUB1 and the second substrate SUB2, and ispositioned between the first insulating layer IL1 and the secondsubstrate SUB2. In an embodiment, the sealing part SP includes the frit,and is heated by a laser beam to adhere the first substrate SUB1 and thesecond substrate SUB2.

The heat reflection part HR is positioned between the sealing part SPand the first substrate SUB1. The heat reflection part HR is positionedbetween the first insulating layer IL1 and the sealing part SP, and isin direct contact with the sealing part SP and the first insulatinglayer IL1.

In an embodiment, the heat reflection part HR is formed on a same layeras the first data wire DW1 and includes a same material as the seconddata wire DW2. In an embodiment, the heat reflection part HR isconcurrently (e.g., simultaneously) formed with the second data wire DW2by a process forming the second data wire DW2.

The heat reflection part HR is not in contact with the common powersupply line CVL or the circuit unit CP. In an embodiment, the heatreflection part HR has an island shape.

When heating the sealing part SP by using the heat of the laser beam,the heat reflection part HR again reflects the heat passing the sealingpart SP toward the sealing part SP direction, thereby helping thesealing part SP to be easily heated.

As described above, in the organic light emitting diode display 1000according to an exemplary embodiment, the common power supply line CVLis positioned on the same layer as the second data wire DW2 to overlapthe circuit unit CP on the circuit unit CP of the circuit area CA,thereof minimizing or reducing a plane width of the circuit area CA.

That is, the organic light emitting diode display 1000 with a minimizedor reduced width of the non-display area NDA is provided.

Also, in the organic light emitting diode display 1000 according to anexemplary embodiment, the common power supply line CVL includes thefirst sub-common power supply line SCVL1 positioned on the same layer asthe second data wire DW2 and the second sub-common power supply lineSCVL2 positioned on the same layer as the first electrode E1, therebyminimizing or reducing electrical resistance of the common power supplyline CVL. Accordingly, the organic light emitting diode display 1000suppressing the drop of the voltage of the common power supply passingthrough the second electrode E2 from the common power supply line CVLdue to the electrical resistance is provided.

Also, in the organic light emitting diode display 1000 according to anexemplary embodiment, as the heat reflection part HR in contact with thesealing part SP includes the same material as the second data wire DW2and is not in contact with the common power supply line CVL or thecircuit unit CP, when heating the sealing part SP by using the heat ofthe laser beam, the heat passing the sealing part SP is suppressed frombeing transmitted to the common power supply line CVL and the circuitunit CP through the heat reflection part HR. As above-described, as theheat transmitted from the sealing part SP to the heat reflection part HRby the laser beam used during the manufacturing process is suppressedfrom being transmitted to the common power supply line CVL and thecircuit unit CP, degradation of the first insulating layer IL1, thesecond insulating layer IL2, and the pixel definition layer PDL disposedin the non-display area NDA due to the heat is suppressed, and becausethe gas generated from the first insulating layer IL1, the secondinsulating layer IL2, and the pixel definition layer PDL is suppressedfrom being generated, the inside of the organic light emitting diodedisplay 1000 is suppressed from being contaminated due to the gas.

That is, the organic light emitting diode display 1000 with suppressedinternal contamination is provided,

As described above, the organic light emitting diode display 1000 withthe minimized or reduced width of the non-display area NDA and also withthe internal contamination being suppressed is provided.

Next, an organic light emitting diode display according to anotherexemplary embodiment will be described with reference to FIG. 4 .

Differences from the previously described organic light emitting diodedisplay according to an exemplary embodiment will be described.

FIG. 4 is a cross-sectional view of an organic light emitting diodedisplay according to another exemplary embodiment, taken along a linecorresponding to the line III-III of FIG. 1 .

Referring to FIG. 4 , an organic light emitting diode display 1002according to another exemplary embodiment includes the first substrateSUB1, the second substrate SUB2, the pixel Px, the first insulatinglayer IL1, the second insulating layer IL2, the pixel definition layerPDL, the circuit unit CP, the common power supply line CVL, the sealingpart SP, and the heat reflection part HR.

The heat reflection part HR is positioned between the sealing part SPand the first substrate SUB1. The heat reflection part HR is positionedbetween the first insulating layer IL1 and the sealing part SP, and isin direct contact with the sealing part SP and the first insulatinglayer IL1.

In an embodiment, the heat reflection part HR is formed on a same layeras the first data wire DW1 and includes a same material as the firstdata wire DW1. In an embodiment, the heat reflection part HR isconcurrently (e.g., simultaneously) formed with the first data wire DW1by a process forming the first data wire DW1.

The heat reflection part HR is not in contact with the common powersupply line CVL or the circuit unit CP.

As described above, in the organic light emitting diode display 1002according to another exemplary embodiment, the common power supply lineCVL is positioned on the same layer as the second data wire DW2 tooverlap the circuit unit CP on the circuit unit CP of the circuit areaCA, thereby minimizing or reducing the plane width of the circuit areaCA.

That is, the organic light emitting diode display 1002 with theminimized or reduced width of the non-display area NDA is provided.

Also, in the organic light emitting diode display 1002 according toanother exemplary embodiment, the common power supply line CVL includesthe first sub-common power supply line SCVL1 positioned on the samelayer as the second data wire DW2 and the second sub-common power supplyline SCVL2 positioned on the same layer as the first electrode E1,thereby minimizing or reducing the electrical resistance of the commonpower supply line CVL. Accordingly, the organic light emitting diodedisplay 1002 in which the voltage of the common power supply passing thesecond electrode E2 from the common power supply line CVL is suppressedfrom being dropped by the electrical resistance is provided.

Also, in the organic light emitting diode display 1002 according toanother exemplary embodiment, as the heat reflection part HR in contactwith the sealing part SP includes the same material as the first datawire DW1 and is not in contact with the common power supply line CVL orthe circuit unit CP, when heating the sealing part SP by using the heatof the laser beam, the heat passing the sealing part SP is suppressedfrom being transmitted to the common power supply line CVL and thecircuit unit CP through the heat reflection part HR. As described above,as the heat transmitted from the sealing part SP to the heat reflectionpart HR by the laser beam used during the manufacturing process issuppressed from being transmitted to the common power supply line CVLand the circuit unit CP, the degradation of the first insulating layerIL1, the second insulating layer IL2, and the pixel definition layer PDLdisposed in the non-display area NDA due to the heat is suppressed, andbecause the gas generated from first insulating layer IL1, the secondinsulating layer IL2, and the pixel definition layer PDL is suppressedfrom being generated, the inside of the organic light emitting diodedisplay 1002 is suppressed from being contaminated due to the gas.

That is, the organic light emitting diode display 1002 with suppressedinternal contamination is provided.

As described above, the organic light emitting diode display 1002 withthe minimized or reduced width of the non-display area NDA and also withthe internal contamination being suppressed is provided.

Next, an organic light emitting diode display according to anotherexemplary embodiment will be described with reference to FIG. 5 .

Differences from the previously described organic light emitting diodedisplay according to an exemplary embodiment will be described.

FIG. 5 is a cross-sectional view of an organic light emitting diodedisplay according to another exemplary embodiment, taken along a linecorresponding to the line III-III of FIG. 1 .

Referring to FIG. 5 , an organic light emitting diode display 1003according to another exemplary embodiment includes the first substrateSUB1, the second substrate SUB2, the pixel Px, the first insulatinglayer IL1, the second insulating layer IL2, a third insulating layerIL3, the pixel definition layer PDL, the circuit unit CP, the commonpower supply line CVL, the sealing part SP, and the heat reflection partHR.

The third insulating layer IL3 is positioned between the second datawire DW2 and the first electrode E1 of the organic light emittingelement OLED.

In an embodiment, the third insulating layer IL3 may include aninorganic insulating layer including at least one of a silicon nitrideand a silicon oxide, or an organic insulating layer. The thirdinsulating layer IL3 may be formed of a single layer or multiple layers.

The first electrode E1 of the organic light emitting element OLED is incontact with the second data wire DW2 through a contact hole formed inthe third insulating layer IL3. The second data wire DW2 is in contactwith the second insulating layer IL2, and the first electrode E1 is notin contact with the second insulating layer IL2.

In an embodiment, the common power supply line CVL includes the firstsub-common power supply line SCVL1 and the second sub-common powersupply line SCVL2.

In an embodiment, the first sub-common power supply line SCVL1 ispositioned on the same layer as the second data wire DW2, and includesthe same material as the second data wire DW2.

The second sub-common power supply line SCVL2 is positioned on the firstsub-common power supply line SCVL1. The second sub-common power supplyline SCVL2 is in direct contact with the first sub-common power supplyline SCVL1 through the contact hole formed in the third insulating layerIL3.

The sealing part SP is positioned in the sealing area SA of thenon-display area NDA of the first substrate SUB1. The sealing part SPadheres the first substrate SUB1 and the second substrate SUB2, and ispositioned between the second insulating layer IL2 and the secondsubstrate SUB2. In an embodiment, the sealing part SP includes the frit,and is heated by a laser beam to adhere the first substrate SUB1 and thesecond substrate SUB2.

The heat reflection part HR is positioned between the sealing part SPand the first substrate SUB1. The heat reflection part HR is positionedbetween the second insulating layer IL2 and the sealing part SP, and isin direct contact with the sealing part SP and the second insulatinglayer IL2.

In an embodiment, the heat reflection part HR is positioned on the samelayer as the second data wire DW2 and includes the same material as thesecond data wire DW2. In an embodiment, the heat reflection part HR isconcurrently (e.g., simultaneously) formed with the second data wire DW2by a process forming the second data wire DW2.

The heat reflection part HR is not in contact with the common powersupply line CVL or the circuit unit CP.

As described above, in the organic light emitting diode display 1003according to another exemplary embodiment, the common power supply lineCVL is positioned on the same layer as the second data wire DW2 tooverlap the circuit unit CP on the circuit unit CP of the circuit areaCA, thereby minimizing or reducing the plane width of the circuit areaCA.

That is, the organic light emitting diode display 1003 with theminimized or reduced width of the non-display area NDA is provided.

Also, in the organic light emitting diode display 1003 according to anexemplary embodiment, the common power supply line CVL includes thefirst sub-common power supply line SCVL1 positioned on the same layer asthe second data wire DW2 and the second sub-common power supply lineSCVL2 positioned on the same layer as the first electrode E1, therebyminimizing or reducing electrical resistance of the common power supplyline CVL. Accordingly, the organic light emitting diode display 1003with the drop of the voltage of the common supply passing through thesecond electrode E2 from the common power supply line CVL due to theelectrical resistance being suppressed is provided.

Also, in the organic light emitting diode display 1003 according toanother exemplary embodiment, the heat reflection part HR in contactwith the sealing part SP includes the same material as the second datawire DW2 on the same layer as the second data wire DW2 and is not incontact with the common power supply line CVL or the circuit unit CP,and when heating the sealing part SP by using the heat of the laserbeam, the heat passing the sealing part SP is suppressed from beingtransmitted to the common power supply line CVL and the circuit unit CPthrough the heat reflection part HR. As described above, as the heattransmitted from the sealing part SP to the heat reflection part HR bythe laser beam used during the manufacturing process is suppressed frombeing transmitted to the common power supply line CVL and the circuitunit CP, degradation of the first insulating layer IL1, the secondinsulating layer IL2, and the pixel definition layer PDL disposed in thenon-display area NDA due to the heat is suppressed, and because the gasgenerated from the first insulating layer IL1, the second insulatinglayer IL2, and the pixel definition layer PDL is suppressed from beinggenerated, the inside of the organic light emitting diode display 1003is suppressed from being contaminated due to the gas.

That is, the organic light emitting diode display 1003 with thesuppressed internal contamination is provided.

According to an aspect, as described above, the organic light emittingdiode display 1003 with the minimized or reduced width of thenon-display area NDA and also with the suppressed internal contaminationis provided.

While the present invention has been described in connection with whatare presently considered to be some practical exemplary embodiments, itis to be understood that the invention is not limited to the disclosedembodiments, but, on the contrary, is intended to cover variousmodifications and equivalent arrangements included within the spirit andscope of the appended claims.

What is claimed is:
 1. (canceled)
 2. An organic light emitting diodedisplay comprising: a substrate including a display area and anon-display area adjacent to the display area; a pixel thin filmtransistor positioned in the display area of the substrate; a firstconductive layer positioned on the pixel thin film transistor; a secondconductive layer positioned on the first conductive layer; an organiclight emitting element positioned on the second conductive layer andelectrically connected to the pixel thin film transistor through thefirst conductive layer and the second conductive layer; a circuit unitpositioned in the non-display area of the substrate and including acircuit thin film transistor electrically connected to the pixel thinfilm transistor; and a common power supply line overlapping at leastpart of the circuit unit, electrically connected to the organic lightemitting element, and formed on a same layer as the second conductivelayer, wherein the pixel thin film transistor includes: a pixel activelayer comprising a channel region, a source region, and a drain regionon the substrate; and a pixel gate electrode overlapping the channelregion of the pixel active layer, wherein the circuit thin filmtransistor includes: a circuit active layer comprising a channel region,a source region, and a drain region on the substrate; and a circuit gateelectrode overlapping the channel region of the circuit active layer,wherein the non-display area includes: a circuit area adjacent to thedisplay area and including the circuit unit and the common power supplyline; and a sealing area adjacent to the circuit area, the organic lightemitting diode display further comprising a sealing part positioned inthe sealing area and a heat reflection part in contact with the sealingpart between the sealing part and the substrate, wherein the heatreflection part is isolated from the common power supply line or thecircuit unit, and wherein the heat reflection part is formed on a samelayer as the first conductive layer.
 3. The organic light emitting diodedisplay of claim 2, further comprising: a gate insulating layer disposedbetween the pixel active layer and the pixel gate electrode, and betweenthe circuit active layer and the circuit gate electrode.
 4. The organiclight emitting diode display of claim 2, wherein the heat reflectionpart has an island shape.
 5. The organic light emitting diode display ofclaim 2, wherein the heat reflection part includes a same material asthe first conductive layer.
 6. The organic light emitting diode displayof claim 2, wherein the circuit active layer is formed on a same layeras the pixel active layer; and the circuit gate electrode is formed on asame layer as the pixel gate electrode.
 7. The organic light emittingdiode display of claim 2, further comprising a first insulating layerpositioned between the pixel thin film transistor and the firstconductive layer.
 8. The organic light emitting diode display of claim7, further comprising a second insulating layer positioned between thefirst conductive layer and the second conductive layer.
 9. The organiclight emitting diode display of claim 8, wherein the common power supplyline is positioned on the second insulating layer, and the circuit unitis covered by the second insulating layer.
 10. The organic lightemitting diode display of claim 8, wherein the organic light emittingelement includes: a first electrode positioned on the second insulatinglayer; an organic emission layer positioned on the first electrode; anda second electrode positioned on the organic emission layer.
 11. Theorganic light emitting diode display of claim 10, wherein the commonpower supply line includes: a first sub-common power supply line formedon a same layer as the second conductive layer; and a second sub-commonpower supply line in contact with the first sub-common power supply lineand formed on a same layer as the first electrode.
 12. The organic lightemitting diode display of claim 10, wherein the common power supply lineis in direct contact with the second electrode.
 13. The organic lightemitting diode display of claim 10, wherein the first electrode and thesecond conductive layer are in contact with the second insulating layer.14. The organic light emitting diode display of claim 10, furthercomprising a third insulating layer positioned between the secondconductive layer and the first electrode.
 15. The organic light emittingdiode display of claim 2, wherein the common power supply line includesa same material as the second conductive layer.
 16. The organic lightemitting diode display of claim 15, wherein the common power supply lineis formed by a same process as the second conductive layer.